Semiconductors
Power Semiconductor > IGBT (Insulated Gate Bipolar Transistor)
MR sereis IGBT low current range
スクロールできます
| Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
|---|
MR sereis IGBT middle current range
スクロールできます
| Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
|---|
MI sereis IGBT middle current range
スクロールできます
| Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
|---|
Power Semiconductor > FRD (Fast Recovery Diode)
MR Series FRD
スクロールできます
| Parts | Reverse voltage VRR [V] |
Forward current IF [A] |
Forward voltage VF typical limit [V] |
Forward voltage VF upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
|---|
MI Series FRD
スクロールできます
| Parts | Reverse voltage VRR [V] |
Forward current IF [A] |
Forward voltage VF typical limit [V] |
Forward voltage VF upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
|---|
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